| PART |
Description |
Maker |
| CGY2010G-T |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP SEMICONDUCTORS
|
| LDC18897M20Q-361 |
880 MHz - 915 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.22 dB INSERTION LOSS-MAX
|
MURATA MANUFACTURING CO LTD
|
| LMSP54AA-097 |
RF Diode Switches 880 MHz - 915 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.2 dB INSERTION LOSS
|
Murata Manufacturing Co., Ltd.
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| DP52-0005-TR DP52-00051 |
Low Cost SMT Dual Band Diplexer, 824-960/1850-1990 MHz(AMPS/PCS), 880-960/1700-1900 MHz(GSM/DCS)
|
Tyco Electronics
|
| MRF9120 |
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| MRF6P23190HR6 |
2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET
|
MOTOROLA
|
| MHW9236 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF5S19090LR3 MRF5S19090LSR3 MRF5S19090LR MRF5S190 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
